sot23 pnp silicon planar medium power transistor issue 3 - october 1995 features * 60 volt v ceo * 1 amp continuous current complementary type ? fmmt451 partmarking detail ? 551 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -80 v i c =-100 m a collector-emitter sustaining voltage v ceo(sus) -60 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -0.1 m a v cb =-60v emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.35 v i c =-150ma, i b =-15ma* base-emitter saturation voltage v be(sat) -1.1 v i c =-150ma, i b =-15ma* static forward current transfer ratio h fe 50 10 150 i c =-150ma, v ce =-10v* i c =-1a, v ce =-10v* transition frequency f t 150 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMT551 c b e 3 - 130 3 - 129 FMMT551 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v ol t s) i c - collector current (amps) v be(on) v i c v - (v ol t s) -0.6 -0.01 -10 -0.1 -1 -0.7 -0.8 -0.9 -1.0 0 -0.01 -0.1 -10 -1 -0.2 -0.4 -0.6 -0.8 i c /i b =10 i c - collector current (amps) h fe v i c h - norm al i sed g ai n ( %) -0.001 -0.01 -10 -0.1 -1 20 40 60 80 100 i c - collector current (amps) v - (v ol t s) -0.8 -1.0 -1.2 -1.4 -0.01 -0.1 -1 -10 -0.6 v be(sat) v i c 1 0.1 safe operating area v ce - collector emitter voltage (v) 10v 100v 1s dc 100ms 10ms 100 m s 1ms 1v 0.01 0.1v 10
sot23 pnp silicon planar medium power transistor issue 3 - october 1995 features * 60 volt v ceo * 1 amp continuous current complementary type ? fmmt451 partmarking detail ? 551 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -80 v i c =-100 m a collector-emitter sustaining voltage v ceo(sus) -60 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -0.1 m a v cb =-60v emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.35 v i c =-150ma, i b =-15ma* base-emitter saturation voltage v be(sat) -1.1 v i c =-150ma, i b =-15ma* static forward current transfer ratio h fe 50 10 150 i c =-150ma, v ce =-10v* i c =-1a, v ce =-10v* transition frequency f t 150 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMT551 c b e 3 - 130 3 - 129 FMMT551 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v ol t s) i c - collector current (amps) v be(on) v i c v - (v ol t s) -0.6 -0.01 -10 -0.1 -1 -0.7 -0.8 -0.9 -1.0 0 -0.01 -0.1 -10 -1 -0.2 -0.4 -0.6 -0.8 i c /i b =10 i c - collector current (amps) h fe v i c h - norm al i sed g ai n ( %) -0.001 -0.01 -10 -0.1 -1 20 40 60 80 100 i c - collector current (amps) v - (v ol t s) -0.8 -1.0 -1.2 -1.4 -0.01 -0.1 -1 -10 -0.6 v be(sat) v i c 1 0.1 safe operating area v ce - collector emitter voltage (v) 10v 100v 1s dc 100ms 10ms 100 m s 1ms 1v 0.01 0.1v 10
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